DocumentCode
2382276
Title
Wavelength dependence of catastrophic optical damage threshold in 980 nm semiconductor diode lasers
Author
Lock, Daren ; Sweeney, Stephen J. ; Adams, Alfred R.
Author_Institution
Dept. of Phys., Surrey Univ., Guildford, UK
Volume
1
fYear
2003
fDate
27-28 Oct. 2003
Firstpage
421
Abstract
We investigate the wavelength dependence of the catastrophic optical damage current in 980 nm lasers. Using high pressure and low temperature techniques, we find an intrinsic dependence of this threshold on wavelength.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high-temperature techniques; indium compounds; laser beam effects; semiconductor lasers; waveguide lasers; 980 nm; GaAs-AlGaAs; InGaAs-InP; buried heterostructure lasers; catastrophic optical damage threshold; high pressure technique; low temperature technique; ridge waveguide lasers; semiconductor diode lasers; Erbium-doped fiber lasers; Gallium arsenide; Heating; Indium phosphide; Laser theory; Power generation; Power lasers; Semiconductor diodes; Semiconductor lasers; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7888-1
Type
conf
DOI
10.1109/LEOS.2003.1251888
Filename
1251888
Link To Document