Title :
Fundamental limitations of high power 980nm InGaAs/GaAs pump lasers
Author :
Lock, D. ; Sweeney, S.J. ; Adams, A.R.
Author_Institution :
Dept. of Phys., Surrey Univ., Guildford, UK
Abstract :
This paper shows that the output power and efficiency of 980 nm high power lasers is limited by Auger recombination which contributes 15% of the threshold current at room temperature.
Keywords :
III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; optical pumping; quantum well lasers; 20 degC; 980 nm; Auger recombination; InGaAs-GaAs; high power lasers; pump lasers; room temperature; Gallium arsenide; Indium gallium arsenide; Laser excitation; Photonic band gap; Power lasers; Pump lasers; Radiative recombination; Spontaneous emission; Temperature; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1251891
