DocumentCode :
2382965
Title :
Memory design using one-transistor gain cell on SOI
Author :
Ohsawa, T. ; Fujita, K. ; Higashi, T. ; Iwata, Y. ; Kajiyama, T. ; Asao, Y. ; Sunouchi, K.
Author_Institution :
Memory Division, Toshiba Corporation Semiconductor Company
Volume :
2
fYear :
2002
fDate :
7-7 Feb. 2002
Firstpage :
114
Lastpage :
426
Keywords :
Design engineering; Hardware; Large scale integration; Logic arrays; Microelectronics; Performance gain; Random access memory; Research and development; Signal processing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7335-9
Type :
conf
DOI :
10.1109/ISSCC.2002.993125
Filename :
993125
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2382965
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