Title :
Physics-based compact modeling of double-gate graphene field-effect transistor operation
Author :
Zebrev, Gennady I. ; Tselykovskiy, Alexander A. ; Turin, Valentin O.
Author_Institution :
Dept. of Micro- & Nanoelectron., Nat. Res. Nucl. Univ. MEPHI, Moscow, Russia
Abstract :
An analytic compact model of large-area double-gate graphene field-effect transistor is presented. As parts of the model, the electrostatics of double-gate structure is described and a unified phenomenological approach for modeling of the two drain current saturation modes is proposed.
Keywords :
electrostatics; field effect transistors; fullerene devices; graphene; C; analytic compact model; double-gate graphene field-effect transistor operation; double-gate structure; drain current saturation modes; large-area double-gate graphene field-effect transistor; physics-based compact modeling; unified phenomenological approach; Capacitance; Electric fields; Electrostatics; FETs; Logic gates; Mathematical model;
Conference_Titel :
Microelectronics (MIEL), 2012 28th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4673-0237-1
DOI :
10.1109/MIEL.2012.6222843
