DocumentCode :
2384939
Title :
Substrate options and add-on process modules for monolithic RF silicon technology
Author :
Burghartz, J.N. ; Bartek, M. ; Rejaei, B. ; Sarro, P.M. ; Polyakov, A. ; Pham, N.P. ; Boullaard, E. ; Ng, K.T.
Author_Institution :
Delft Univ. of Technol., Netherlands
fYear :
2002
fDate :
2002
Firstpage :
17
Lastpage :
23
Abstract :
Add-on process modules as enhancements of standard high-frequency silicon integration processes are discussed. Such modules can be added without any interference with the core process before (pre-process modules), during (mid-process modules), or after (post-process modules) the circuit integration. High-resistivity silicon substrates, the patterned metal ground shield, and bulk micromachining are presented as examples in each category, respectively.
Keywords :
MMIC; elemental semiconductors; micromachining; silicon; transceivers; Si; add-on process modules; bulk micromachining; high-frequency silicon integration processes; high-resistivity silicon substrates; mid-process modules; monolithic RF silicon technology; patterned metal ground shield; posi -process modules; pre-process modules; Electromagnetic heating; Electronic components; Gallium arsenide; Integrated circuit technology; MESFETs; MMICs; Microwave devices; Microwave technology; Radio frequency; Silicon on insulator technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
ISSN :
1088-9299
Print_ISBN :
0-7803-7561-0
Type :
conf
DOI :
10.1109/BIPOL.2002.1042878
Filename :
1042878
Link To Document :
بازگشت