Title :
Modeling and characterization of the limits of transistor operation due to quasisaturation
Author :
Dutta, Ranadeep ; Thiel, Frank
Author_Institution :
Legerity, Austin, TX, USA
Abstract :
A first principles analytical model was developed to predict quasisaturation characteristics from process and device parameters. The model uses physical and geometrical attributes only, with no fitting parameters. Measurements from various process splits to characterize the operation limit from quasisaturation as a function of bias, device area and temperature corroborated the model. Also described is a method that was devised to measure quasisaturation at wafer probe.
Keywords :
bipolar transistors; semiconductor device measurement; semiconductor device models; device parameters; first principles analytical model; high voltage high speed bipolar transistors; process parameters; quasisaturation; transistor operation limits; vertical PNP transistor; Analytical models; Area measurement; Breakdown voltage; Current density; Equations; Low voltage; Probes; Semiconductor device modeling; Solid modeling; Temperature;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042885
