• DocumentCode
    2385169
  • Title

    Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance

  • Author

    Ahlgren, D.C. ; Jagannathan, B. ; Jeng, S.J. ; Smith, P. ; Angell, D. ; Chen, H. ; Khater, M. ; Pagette, F. ; Rieh, J.-S. ; Schonenberg, K. ; Stricker, A. ; Freeman, G. ; Joseph, A. ; Stein, K. ; Subbanna, S.

  • Author_Institution
    IBM Microelectron. Semicond. Res. & Dev. Center (SRDC), Hopewell Junction, NY, USA
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    80
  • Lastpage
    83
  • Abstract
    A process tolerance analysis of a SiGe NPN HBT with >200 GHz fT and >250 GHz fMAX is presented. AC and DC device results on 200 mm wafers demonstrate a wide process window resulting in a highly manufacturable HBT technology.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; semiconductor device measurement; 200 mm; 250 GHz; AC device results; DC device results; Si/SiGe HBT technology; SiGe; SiGe NPN HBT; process tolerance analysis; process variability analysis; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Manufacturing processes; Microelectronics; Performance analysis; Production; Silicon germanium; Space technology; Tolerance analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-7561-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.2002.1042891
  • Filename
    1042891
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2385169