Title :
A manufacturable 0.18-μm SiGe BiCMOS technology for 40-Gb/s optical communication LSIs
Author :
Wada, S. ; Nonaka, Y. ; Saito, T. ; Tominari, T. ; Koyu, K. ; Ikeda, K. ; Sakai, K. ; Sasahara, K. ; Watanabe, K. ; Fujiwara, H. ; Murata, F. ; Ohue, E. ; Kiyota, Y. ; Shimamoto, H. ; Washio, K. ; Takeyari, R. ; Hosoe, H. ; Hashimoto, T.
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
A highly manufacturable 0.18-μm SiGe BiCMOS technology has been developed for 40-Gb/s optical communication LSIs. A high fT/fmax of 140/183 GHz in the self-aligned SiGe HBT was achieved with highly reliable yield and device reliability. An optimized process flow and reduced thermal budgets of the SiGe HBT process made it possible to integrate a scaled CMOS without performance degradations. High performance passive elements were also integrated for a large functionality. A 16:1 MUX fabricated in this technology showed a maximum operating clock rate of 54 GHz.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; integrated circuit measurement; large scale integration; multiplexing equipment; optical communication; semiconductor device measurement; semiconductor device reliability; 0.18 micron; 183 GHz; MUX; SiGe; SiGe BiCMOS technology; SiGe HBT process; device reliability; high performance passive elements; optical communication LSIs; optimized process flow; reduced thermal budget; self-aligned SiGe HBT; BiCMOS integrated circuits; CMOS process; CMOS technology; Clocks; Germanium silicon alloys; Heterojunction bipolar transistors; Manufacturing; Optical fiber communication; Silicon germanium; Thermal degradation;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042892
