Title :
Modeling the self-heating effect in SiGe HBTs
Author :
Mnif, H. ; Zimmer, T. ; Battaglia, J.L. ; Ardouin, B.
Author_Institution :
Lab. de Microelectronique IXL, Bordeaux I Univ., Talence, France
Abstract :
This paper describes a new approach for modeling the self-heating phenomena in silicon germanium (SiGe) heterojunction bipolar transistors (HBT). This approach is based on the physical resolution of the heat transfer differential equation. The model is compared to the electro-thermal model used in most commercial circuit simulators. This new approach produces the better self-heating agreement with measured data. For its validation, it is implemented into a recent compact model.
Keywords :
Ge-Si alloys; heat transfer; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; HBT; SiGe; compact model; electro-thermal model; heat transfer differential equation; self-heating; Circuit simulation; Equations; Equivalent circuits; Germanium silicon alloys; Heat transfer; Heating; Heterojunction bipolar transistors; Silicon germanium; Temperature; Thermal resistance;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042895
