Structural dependence of the thermal resistance of trench-isolated bipolar transistors

The effect of the structural variation of device on its thermal resistance was investigated for trench-isolated bipolar transistors. Devices with various number of emitter segments and inter-segment spacings and several different trench-to-emitter distances were fabricated and the thermal resistance was measured/compared. An analytical thermal model was also developed and provided a good prediction on the structural dependence of the thermal resistance, exhibiting a good agreement with the measurement. 2D thermal device simulation was performed to obtain detailed temperature distribution inside the devices.