Title :
A 16GHz ultra high-speed Si/SiGe HBT comparator
Author :
Jensen, Jonathan C. ; Larson, Lawrence E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, CA, USA
Abstract :
This paper presents an improved master-slave bipolar Si/SiGe HBT comparator design for ultra high-speed data converter applications. Implemented in a 0.5 μm, 55 GHz BiCMOS Si/SiGe process, this comparator consumes approximately 80 mW with sampling speeds up to 16 GHz.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; analogue-digital conversion; comparators (circuits); elemental semiconductors; heterojunction bipolar transistors; semiconductor materials; silicon; 16 GHz; 55 GHz; 80 mW; BiCMOS process; HBT comparator; Si-SiGe; latch regeneration time; master-slave bipolar HBT; sampling speeds; ultra high-speed data converter; Application software; Capacitance; Clocks; Germanium silicon alloys; Heterojunction bipolar transistors; Master-slave; Sampling methods; Silicon germanium; Voltage; Wireless communication;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042900
