• DocumentCode
    2385461
  • Title

    Implementation of a Si-rich SiON nucleation layer for an improved selective SiGe HBT architecture

  • Author

    Van Huylenbroeck, S. ; Loo, R. ; Decoutere, S. ; Vleugels, F. ; Kunnen, E. ; Schaekers, M. ; Caymax, M.

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    143
  • Lastpage
    146
  • Abstract
    A Si-rich SiON is implemented as nucleation layer in a selective SiGe HBT architecture to improve the SiGe base layer process window and the reactor throughput. The concept is demonstrated in a 0.35 μm BiCMOS technology.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; nucleation; silicon compounds; 0.35 μm BiCMOS technology; Si-rich SiON nucleation layer; SiGe; SiGe base layer process window; SiON; improved selective SiGe HBT architecture; nucleation layer; reactor throughput; BiCMOS integrated circuits; Etching; Germanium silicon alloys; Hafnium; Heterojunction bipolar transistors; Inductors; Resists; Silicon germanium; Space technology; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-7561-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.2002.1042905
  • Filename
    1042905
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2385461