Methodology to evaluate long channel matching deterioration and effects of transistor segmentation on MOSFET matching

This paper summarizes an experimental study on matching of long NMOS transistors and the effects of splitting-up long transistors into series of short transistors. For this purpose, a dedicated set of matched pair test structures were designed and manufactured in a 45 nm CMOS technology. This study is used to evaluate relative threshold voltage matching performance degradations that are observed for long channel devices in such technologies.