DocumentCode
2386131
Title
CMOS and Interconnect Reliability - Bias-Temperature Instability in SiON and High-k Gate Dielectrics
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
1
Keywords
Charge pumps; Degradation; Dielectric substrates; High-K gate dielectrics; Instruments; Life estimation; Lifetime estimation; Niobium compounds; Temperature; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0438-X
Type
conf
DOI
10.1109/IEDM.2006.346771
Filename
4154190
Link To Document