Title :
Prediction and Control of NBTI -- Induced SRAM Vccmin Drift
Author :
Lin, J.C. ; Oates, A.S. ; Tseng, H.C. ; Liao, Y.P. ; Chung, T.H. ; Huang, K.C. ; Tong, P.Y. ; Yau, S.H. ; Wang, Y.F.
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsinchu
Abstract :
The paper presents a comprehensive study of the impact of NBTI on SRAM Vccmin stability. The authors describe a novel simulation technique to predict the between - die statistical distribution of Vccmin drift due to NBTI. While the drift is a fundamental phenomenon, it was shown that by cell design and transistor process optimization, the drift can be reduced to tolerable levels
Keywords :
SRAM chips; integrated circuit modelling; integrated circuit reliability; statistical distributions; thermal stability; NBTI control; NBTI prediction; SRAM; between-die statistical distribution; cell design; negative bias temperature instability; transistor process optimization; voltage drift; Degradation; Design optimization; Niobium compounds; Predictive models; Process design; Random access memory; Stability; Statistical distributions; Stress; Titanium compounds;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346779
