A comparative study of dielectric properties of As2Se3 and As2Se3Bix glassy systems

We report about the peculiarities of the dielectric properties of a-As₂Se₃ and As₂Se₃Bi_x (x=20 at.%) layers. The As₂Se₃ layers are characterized by gradual decrease of ε with frequency and increase with temperature. A broad maximum is registered on tgδ-f dependence. At low frequencies f<10^-1 Hz the loss factor increases with temperature. For modified system As₂Se₃Bi_x much greater decrease of ε with frequency and increase with temperature is found. tgδ-f dependence of this system demonstrates no maximum and at frequencies f<10^-1 Hz the loss factor decreases with temperature. The mentioned above results confirm the assumption that the metal dopants act as positively charge impurities.