DocumentCode
2386650
Title
Processes and Device Technologies for AlGaN/GaN High Electron Mobility Transistors
Author
Adesida, I. ; Kumar, V. ; Mohammed, F. ; Wang, L. ; Basu, A. ; Kim, D.-H. ; Lanford, W.
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana-Champaign, IL
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
4
Abstract
The AlInGaN-based high electron mobility transistor (HEMT) has proven to be the leading candidate for simultaneously realizing ultra-high frequency and ultra-high power amplifiers. The potential for these devices extends into operation in the mm-wave regime. Processes and device technologies that have resulted in these tremendous improvements are addressed
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; high electron mobility transistors; mm-wave regime; ultra-high frequency amplifiers; ultra-high power amplifiers; Aluminum gallium nitride; Electrons; Frequency; Gallium nitride; Gold; HEMTs; MODFETs; Metallization; Microwave devices; Ohmic contacts;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0439-8
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346797
Filename
4154216
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