Device Degradation Phenomena in GaN HFET Technology: Status, Mechanisms, and Opportunities

Author

Piner, E.L. ; Singhal, S. ; Rajagopal, P. ; Therrien, R. ; Roberts, J.C. ; Li, T. ; Hanson, A.W. ; Johnson, J.W. ; Kizilyalli, I.C. ; Linthicum, K.J.

Author_Institution

Nitronex Corp., Raleigh, NC

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

AlGaN/GaN HFET devices demonstrate remarkable performance. For commercial acceptance of this technology, long-term device stability must meet stringent industry standards. We review the current status of GaN reliability and contrast it with the requirement for commercial viability. Results analyzing degradation pertaining to buffer leakage and gate diode forward failure is presented

Keywords

III-V semiconductors; aluminium compounds; failure analysis; gallium compounds; high electron mobility transistors; semiconductor device reliability; wide band gap semiconductors; AlGaN-GaN; HFET technology; buffer leakage; device degradation phenomena; gate diode forward failure; heterostructure field effect transistor; long-term device stability; Aluminum gallium nitride; Degradation; Electrons; Failure analysis; Gallium nitride; HEMTs; MODFETs; Radio frequency; Schottky diodes; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0439-8

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346798

Filename

4154217