Characterization of HfSiON Gate Dielectric with TiN Gate on Multi-Gate MOSFET

Author

Xiong, Weize ; Young, Chadwin ; Matthew, Kenneth ; Rinn Cleavelin, C. ; Schulz, Thomas ; Schruefer, Klaus ; Patruno, Paul

Author_Institution

Texas Instrum. Inc., Dallas, TX

fYear

2006

fDate

1-4 May 2006

Firstpage

1

Lastpage

3

Abstract

The hysteresis and mobilities of 1nm EOT HfSiON dielectric on multi-gate MOSFET (MuGFET) with TiN metal gate were studied. We did not observe any drain current hysteresis. This is consistent with the same gate stack on planar bulk MOSFET. However, we found significant electron and hole mobility degradation for MuGFET compared to SiO₂ control devices (up to -25%). The percentage of degradation is higher than the same gate stack on planar bulk MOSFET, which points to the poor interfacial oxide quality on the MuGFET fin sidewalls

Keywords

MOSFET; dielectric hysteresis; electron mobility; hafnium compounds; hole mobility; oxygen compounds; silicon compounds; titanium compounds; 1 nm; EOT dielectric; HfSiON; MuGFET; SiO₂; TiN; drain current hysteresis; electron mobility; gate dielectric; hole mobility; multigate MOSFET; Annealing; CMOS technology; Degradation; Dielectrics; Hysteresis; Implants; MOS devices; MOSFET circuits; Silicon; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on

Conference_Location

Padova

Print_ISBN

1-4244-0097-X

Type

conf

DOI

10.1109/ICICDT.2006.220810

Filename

1669397