Title :
An Internally-matched GaN HEMT Amplifier with 550-watt Peak Power at 3.5 GHz
Author :
Wu, Y.F. ; Wood, S.M. ; Smith, R.P. ; Sheppard, S. ; Allen, S.T. ; Parikh, P. ; Milligan, J.
Author_Institution :
Cree Santa Barbara Technol. Center, Goleta, CA
Abstract :
A high-power amplifier using two 28.8-mm-periphery GaN HEMTs was demonstrated with all matching components inside the package. When biased at 55 V, a power bandwidth of 3.3-3.6 GHz was obtained, with 550-Wpeak output, 12.5-dB associated gain and 66% drain efficiency at 3.45 GHz
Keywords :
HEMT circuits; III-V semiconductors; gallium compounds; microwave power amplifiers; wide band gap semiconductors; 12.5 dB; 3.3 to 3.6 GHz; 3.45 GHz; 3.5 GHz; 55 V; 550 W; GaN; high-power amplifier; internally-matched HEMT amplifier; Frequency; Gain; Gallium nitride; HEMTs; Impedance; Packaging; Power amplifiers; Power generation; Pulse amplifiers; Testing;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346800
