Title :
Highly Manufacturable Single-Bridge-Channel MOSFET (SBCFET)
Author :
Lee, Sung-Young ; Kim, Min-Sang ; Yoon, Eun-Jung ; Kim, Sung-Min ; Jun, Lian ; Kim, Dong-Won ; Park, Donggun
Author_Institution :
Device Res. Team, Samsung Electron. Co., Yongin
Abstract :
Modifying the multi-bridge-channel MOSFET (MBCFET) process, we have successfully fabricated single-bridge-channel MOSFET (SBCFET). Due to reduced epitaxial growth steps and simple ion implantation process, the SBCFET has manufacture-worthy simple fabrication process like conventional planar transistor. The current drivability of SBCFET shows 2.0 mA/mum @ 100 pA/mum off-current in 1.0 V operation
Keywords :
MOSFET; epitaxial growth; ion implantation; semiconductor device manufacture; transistors; 1 V; epitaxial growth; ion implantation; multibridge-channel MOSFET; planar transistor; single-bridge-channel MOSFET; Etching; Fabrication; Germanium silicon alloys; Ion implantation; MOSFET circuits; Manufacturing processes; Semiconductor device manufacture; Silicon compounds; Silicon germanium; Tin;
Conference_Titel :
Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on
Conference_Location :
Padova
Print_ISBN :
1-4244-0097-X
DOI :
10.1109/ICICDT.2006.220811
