Title :
Potential propagation model-based failure analysis support tool for MOS LSIs
Author :
Kodama, Mami ; Kakinuma, Hidenori ; Kumagai, Jumpei ; Niina, Hiroshi ; Kiji, Junichi
Author_Institution :
Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan
Abstract :
This paper presents an efficient failure analysis method using a MOS LSI failure analysis system, named Failure Analysis Support Tool (FAST). When LSI design data, test patterns and test conditions are input into FAST, it calculates the potential in integrated circuits based on our proposing Potential Propagation model, and outputs the result as a timing diagram. The location of electrical faults can then be identified using the timing diagram FAST even allows engineers without detailed knowledge of the design to analyze failures in the device swiftly and accurately. This method is useful for logic LSIs and the peripheral circuits of memory LSIs, where faults are often difficult to locate
Keywords :
MOS integrated circuits; MOS logic circuits; MOS memory circuits; failure analysis; integrated circuit design; integrated circuit reliability; integrated circuit testing; large scale integration; FAST; Failure Analysis Support Tool; LSI design data; MOS LSI failure analysis system; MOS LSIs; efficient failure analysis method; electrical faults; faults; integrated circuits; logic LSIs; memory LSIs; peripheral circuits; potential propagation model; potential propagation model-based failure analysis support tool; test conditions; test patterns; timing diagram; Circuit faults; Circuit testing; Design engineering; Failure analysis; Fault diagnosis; Integrated circuit modeling; Integrated circuit testing; Knowledge engineering; Large scale integration; Timing;
Conference_Titel :
Semiconductor Manufacturing, 2000. Proceedings of ISSM 2000. The Ninth International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
0-7803-7392-8
DOI :
10.1109/ISSM.2000.993661