DocumentCode :
2387147
Title :
Improving semiconductor manufacturing yields by using Raman spectroscopic analysis
Author :
Obara, T. ; Tanakadate, J. ; Chabata, T. ; Ishihara, K. ; Mieno, F. ; Yanagihara, F.
Author_Institution :
Iwate Plant Manuf. Technol. Dept., Fujitsu Ltd., Iwate, Japan
fYear :
2000
fDate :
2000
Firstpage :
273
Lastpage :
276
Abstract :
In order to implement effective countermeasures to improve yields, it is essential to analyze particles, clarify their material and determine their source in a short period of time. However, it took time to determine the source of particles using conventional particle analysis methods such as EDX and FT-IR, due to shortcomings arising from their measurement principles. Raman spectroscopic analysis is a method for analyzing particles which compensates for the insufficiencies of conventional analysis methods, so there is possibility that it will enable the determination of particle sources in a shorter period of time. We selected four types of 64 M D-RAM production equipment where particles originating from that manufacturing equipment were considered to be reducing yields
Keywords :
DRAM chips; Raman spectra; integrated circuit manufacture; integrated circuit measurement; integrated circuit yield; 64 Mbit; D-RAM production equipment; Raman spectroscopic analysis; semiconductor manufacturing yields improvement; Chemical analysis; Chemical elements; Diffraction; Inspection; Particle measurements; Raman scattering; Semiconductor device manufacture; Spectroscopy; Tiles; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 2000. Proceedings of ISSM 2000. The Ninth International Symposium on
Conference_Location :
Tokyo
ISSN :
1523-553X
Print_ISBN :
0-7803-7392-8
Type :
conf
DOI :
10.1109/ISSM.2000.993666
Filename :
993666
Link To Document :
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