Defects spectroscopy in SiO2 by statistical random telegraph noise analysis

Author

Gusmeroli, R. ; Compagnoni, C. Monzio ; Riva, A. ; Spinelli, A.S. ; Lacaita, A.L. ; Bonanomi, M. ; Visconti, A.

Author_Institution

Dipt. di Elettronica e Informazione, Politecnico di Milano

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

We investigate the properties of traps in the SiO₂ by means of a statistical analysis of random telegraph noise in Flash memory arrays. We develop a new physical model for the statistical superposition of the elementary Markov processes describing traps occupancy, able to explain the experimental evidence for cell threshold voltage instability. Comparing modeling results with experimental data allowed the estimation of the energy and space distribution of oxide defects

Keywords

Markov processes; crystal defects; semiconductor device noise; silicon compounds; statistical analysis; SiO₂; cell threshold voltage instability; defects spectroscopy; elementary Markov processes; statistical random telegraph noise analysis; statistical superposition; Data mining; Electron traps; Flash memory; Flash memory cells; Markov processes; Nonvolatile memory; Spectroscopy; Statistical analysis; Telegraphy; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346819

Filename

4154238