Complex resistivity of polymer light-emitting diodes

Author

Bianchi, R.F. ; Santos, L.F. ; Faria, R.M.

Author_Institution

Inst. de Fisica, Univ. de Sao Paulo, Sao Carlos, Brazil

fYear

2002

fDate

2002

Firstpage

359

Lastpage

362

Abstract

Complex resistivity measurements in dark and under vacuum were carried out to study the electrical behavior of luminescent polymer diodes (LEDs) having ITO or gold as hole injector electrodes, aluminium as the cathode, and poly[(2-methoxy-5-hexyloxy)-p-phenylenevinylene] - MH-PPV as the luminescent layer. The results obtained were analysed by a model based on resistor-capacitor circuits, which made possible to distinguish between bulk from interface effects, and the contribution of each phenomenon to the electrical current. It was also shown that bulk properties already exist in a film of 0.4 μm thick, and from the theoretical fittings it was obtained the dielectric constant and resistivity of MH-PPV.

Keywords

electrical resistivity; equivalent circuits; optical polymers; organic light emitting diodes; permittivity; Al; Au; ITO; InSnO; MH-PPV; aluminium cathode; bulk properties; complex resistivity; dielectric constant; electrical current; hole injector electrode; interface effects; luminescent layer; poly[(2-methoxy-5-hexyloxy)-p-phenylenevinylene]; polymer light emitting diode; resistor-capacitor circuit model; Aluminum; Cathodes; Circuits; Conductivity measurement; Dielectric constant; Electrodes; Gold; Indium tin oxide; Light emitting diodes; Organic light emitting diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrets, 2002. ISE 11. Proceedings. 11th International Symposium on

Print_ISBN

0-7803-7560-2

Type

conf

DOI

10.1109/ISE.2002.1043018

Filename

1043018