DocumentCode
2387802
Title
Intelligent temperature control strate for LiTaO3 thin film deposition process
Author
Deyin Zhang ; Dagui Huang ; Yanqiu He
fYear
2004
fDate
26-31 Aug. 2004
Firstpage
339
Lastpage
344
Abstract
Temperature is a key parameter of Lithium tantalate (LiTa03) thin film deposition process by metal `organic chemical vapor deposition (MOCVD) because reactor chamber of MOCVD is with properties of a large temperature lag, a big time delay, nonlinear, and a large heat inertia. In this paper, an intelligent temperature control strategy for LiTa03 thin films deposition process is presented and relation between temperature and process is discussed in details. The control strategy is implemented by design of a hybrid temperature control system with Proportional (P), Fuzzy and PID controller. The bumpless switch between two of the three controllers is a key question and has been solved through using fuzzy switch rules. The simulation results show, compared to those of a conventional one, that new temperature control system has a small overshoot, strong robustness, great anti-interference ability and fine temperature tracking ability. The experimental results also attest high resolution of M.2K at stable stage of temperature control is obtained relatively to the maximal temperature of 1373 K.
Keywords
Control systems; Crystallization; Ferroelectric materials; Intelligent control; MOCVD; Sputtering; Substrates; Switches; Temperature control; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Intelligent Mechatronics and Automation, 2004. Proceedings. 2004 International Conference on
Conference_Location
Chengdu, China
Print_ISBN
0-7803-8748-1
Type
conf
DOI
10.1109/ICIMA.2004.1384216
Filename
1384216
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