Hard X-ray Photoelectron spectroscopy (HX-PES) study on chemical binding states of ultra shallow plasma-doped silicon layer for the application of advanced ULSI devices

Author

Jin, C.G. ; Sasaki, Y. ; Okashita, K. ; Tamura, H. ; Ito, H. ; Mizuno, B. ; Okumura, T. ; Kobata, M. ; Kim, J.J. ; Ikenaga, E. ; Kobayashi, K.

Author_Institution

Ultimate Junction Technol. Inc., Osaka

fYear

0

fDate

0-0 0

Firstpage

116

Lastpage

119

Abstract

We took HX-PES measurement (Si 1s) on silicon samples doped by plasma doping (PD) for the first time before and after annealing using either spike RTA or flash lamp anneal (FLA) in SPring-8. After PD, the carrier density of n-Si substrate decreased to intrinsic Si level due to defect induced carrier traps. After annealing, the results revealed that the chemical binding states of the doped samples were well recovered showing high impurity activation

Keywords

X-ray photoelectron spectra; bonds (chemical); carrier density; electron traps; elemental semiconductors; hole traps; incoherent light annealing; plasma materials processing; rapid thermal annealing; semiconductor doping; silicon; substrates; Si; advanced ULSI devices; carrier density; carrier traps; chemical binding states; flash lamp anneal; hard X-ray photoelectron spectroscopy; impurity activation; n-Si substrate; plasma doping; spike RTA; ultra shallow plasma-doped silicon layer; Annealing; Chemicals; Plasma applications; Plasma chemistry; Plasma devices; Plasma measurements; Plasma x-ray sources; Silicon; Spectroscopy; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2006. IWJT '06. International Workshop on

Conference_Location

Shanghai

Print_ISBN

1-4244-0047-3

Type

conf

DOI

10.1109/IWJT.2006.220874

Filename

1669461