Title :
Process Technology - High K with Metal Gates
Keywords :
Atherosclerosis; CMOS technology; Erbium; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOS devices; Plasma materials processing; Tin;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
DOI :
10.1109/IEDM.2006.346858
