Title :
Improved post-cycling characteristic of FinFET NAND Flash
Author :
Lee, Se Hoon ; Lee, Jong Jin ; Choe, Jeong-Dong ; Cho, Eun Suk ; Ahn, Young Joon ; Hwang, Won ; Kim, Taeyong ; Kim, Woo-Jung ; Yoon, Young-Bae ; Jang, Donghoon ; Yoo, Jongryeol ; Kim, Dongdae ; Park, Kyucharn ; Park, Donggun ; Ryu, Byung-Il
Author_Institution :
Device Res. Team, Samsung Electron. Co., Gyeonggi-Do
Abstract :
In this paper, SONOS type FinFET device has been fabricated and characterized for the NAND flash application. Pre- and post-cycling characteristics are mainly studied both for the FinFET and planar device, with respect to the memory cell performance and device reliability. It has been demonstrated that the performance improvement of the FinFET is maintained after cycling stress, and most importantly, the superior bake retention characteristic of FinFET device is observed after cycling stress compared to the planar device
Keywords :
MOSFET; NAND circuits; flash memories; reliability; NAND flash; SONOS type FinFET device; device reliability; planar device; post-cycling characteristic; Aluminum oxide; Controllability; Dielectrics; Electronic equipment testing; FinFETs; Maintenance; Research and development; SONOS devices; Semiconductor device testing; Stress;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346901
