• DocumentCode
    2389154
  • Title

    Critical Quenching Speed Determining Phase of Ge2Sb2Te5 in Phase--Change Memory

  • Author

    Suh, D. G-S ; Kim, K.H.P. ; Noh, J. G-S ; Shin, W. G-C ; Kang, Y. G-S ; Kim, C. ; Khang, Y. ; Yoo, I.K.

  • Author_Institution
    Semicond. Device & Material Lab., Samsung Adv. Inst. of Technol., Gyeonggi-Do
  • fYear
    2006
  • fDate
    11-13 Dec. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    During the phase-change process of Ge2Sb2Te 5 in PRAM (phase-change random access memory), phase-change dynamics are strongly dependent on the quenching speed, i.e. the cooling speed of melted phase-change material. Here the paper reports the relation between quenching speed of programming pulse and phases of Ge 2Sb2Te5 in phase-change memory in detail. The existence of critical quenching speed is identified, which determines amorphous and crystalline phases in melting followed by quenching operation
  • Keywords
    antimony compounds; germanium compounds; phase change materials; random-access storage; Ge2Sb2Te5; PRAM; amorphous phases; cooling speed; critical quenching speed; crystalline phases; melted phase-change material; phase-change dynamics; phase-change memory; phase-change random access memory; Amorphous materials; Crystalline materials; Crystallization; Delay effects; Electrical resistance measurement; Oscilloscopes; Phase change memory; Phase change random access memory; Pulse measurements; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2006. IEDM '06. International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-4244-0438-X
  • Electronic_ISBN
    1-4244-0439-8
  • Type

    conf

  • DOI
    10.1109/IEDM.2006.346909
  • Filename
    4154328
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2389154