• DocumentCode
    2390213
  • Title

    XtreMOS : The First Integrated Power Transistor Breaking the Silicon Limit

  • Author

    Moens, P. ; Bauwens, F. ; Baele, J. ; Vershinin, K. ; Backer, E. De ; Narayanan, E. M Sankara ; Tack, M.

  • Author_Institution
    AMI Semicond. Belgium BVBA, Oudenaarde
  • fYear
    2006
  • fDate
    11-13 Dec. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Record performance of a novel power transistor integrated in a 0.35 μm power IC technology is reported. Measured specific on-state resistance of 33 mOhm*mm2 for a 94 V breakdown is breaking the silicon-limit and is the lowest reported value to date. The device outperforms its nearest rival by a factor of 2.5. The device consists of the stacking of a vertical MOS on a fully depleted vertical drift layer, leading to a high cell density
  • Keywords
    CMOS integrated circuits; MOS capacitors; power integrated circuits; power transistors; 0.35 micron; 94 V; XtreMOS; fully depleted vertical drift layer; high cell density; integrated power transistor; power IC technology; specific on-state resistance; vertical MOS stacking; Ambient intelligence; CMOS process; MOS capacitors; MOSFETs; Power integrated circuits; Power transistors; Silicon; Stacking; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2006. IEDM '06. International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-4244-0438-X
  • Electronic_ISBN
    1-4244-0439-8
  • Type

    conf

  • DOI
    10.1109/IEDM.2006.346933
  • Filename
    4154368
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2390213