Relationship between TDDB testing and wafer level ramped QBD testing using both fixed current and current density stressing

Over the years various tests have been proposed for measuring the dielectric integrity of gate oxide. The duration of these tests can range from seconds to hours depending on the conditions used. Reliability purists maintain that the longer the test duration the more accurate the reliability prediction will be. Given that today´s technologies are changing rapidly, it is not possible to devote large amounts of time to reliability testing. Therefore, wafer level tests are being used more and more often (as opposed to the lengthy package level TDDB test) to qualify wafer fabrication foundries. This paper investigates two types of wafer level ramped current Q_BD testing together with the package level constant voltage TDDB test. This paper provides a thorough investigation into the oxide area dependence for both Q_BD and TDDB tests. Finally, this paper investigates the potential correlation between the Q_BD and TDDB tests