• DocumentCode
    2390466
  • Title

    High density Through Silicon Via (TSV)

  • Author

    Rimskog, Magnus ; Bauer, Tomas

  • Author_Institution
    Silex Microsyst., Jarfalla
  • fYear
    2008
  • fDate
    9-11 April 2008
  • Firstpage
    105
  • Lastpage
    108
  • Abstract
    The through silicon via (TSV) process developed by Silex provides down to 30 mum pitch for through wafer connections in up to 600 mum thick substrates. Integrated with MEMS designs it enables significantly reduced die size and true ldquoWafer Level Packagingrdquo - features that are particularly important in consumer market applications. The TSV technology also enables integration of advanced interconnect functions in optical MEMS, sensors and microfluidic devices. In addition the via technology opens for very interesting possibilities considering integration with CMOS processing. With several companies using the process already today, qualified volume manufacturing in place and a line-up of potential users, the process is becoming a standard in the MEMS industry. We provide a introduction to the via formation process and also present some on the novel solutions made available by the technology.
  • Keywords
    CMOS integrated circuits; elemental semiconductors; microfluidics; silicon; wafer level packaging; CMOS processing; MEMS industry; consumer market applications; high density through silicon via; microfluidic devices; optical MEMS; sensors devices; wafer level packaging; CMOS technology; Integrated optics; Microfluidics; Micromechanical devices; Optical devices; Optical interconnections; Optical sensors; Packaging; Silicon; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design, Test, Integration and Packaging of MEMS/MOEMS, 2008. MEMS/MOEMS 2008. Symposium on
  • Conference_Location
    Nice
  • Print_ISBN
    978-2-35500-006-5
  • Type

    conf

  • DOI
    10.1109/DTIP.2008.4752962
  • Filename
    4752962