DocumentCode
2390466
Title
High density Through Silicon Via (TSV)
Author
Rimskog, Magnus ; Bauer, Tomas
Author_Institution
Silex Microsyst., Jarfalla
fYear
2008
fDate
9-11 April 2008
Firstpage
105
Lastpage
108
Abstract
The through silicon via (TSV) process developed by Silex provides down to 30 mum pitch for through wafer connections in up to 600 mum thick substrates. Integrated with MEMS designs it enables significantly reduced die size and true ldquoWafer Level Packagingrdquo - features that are particularly important in consumer market applications. The TSV technology also enables integration of advanced interconnect functions in optical MEMS, sensors and microfluidic devices. In addition the via technology opens for very interesting possibilities considering integration with CMOS processing. With several companies using the process already today, qualified volume manufacturing in place and a line-up of potential users, the process is becoming a standard in the MEMS industry. We provide a introduction to the via formation process and also present some on the novel solutions made available by the technology.
Keywords
CMOS integrated circuits; elemental semiconductors; microfluidics; silicon; wafer level packaging; CMOS processing; MEMS industry; consumer market applications; high density through silicon via; microfluidic devices; optical MEMS; sensors devices; wafer level packaging; CMOS technology; Integrated optics; Microfluidics; Micromechanical devices; Optical devices; Optical interconnections; Optical sensors; Packaging; Silicon; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Design, Test, Integration and Packaging of MEMS/MOEMS, 2008. MEMS/MOEMS 2008. Symposium on
Conference_Location
Nice
Print_ISBN
978-2-35500-006-5
Type
conf
DOI
10.1109/DTIP.2008.4752962
Filename
4752962
Link To Document