• DocumentCode
    2390580
  • Title

    Advanced FinFET CMOS Technology: TiN-Gate, Fin-Height Control and Asymmetric Gate Insulator Thickness 4T-FinFETs

  • Author

    Liu, Yongxun ; Matsukawa, Takashi ; Endo, Kazuhiko ; Masahara, Meishoku ; Ishii, Kenichi ; O´uchi, S. ; Yamauchi, Hiromi ; Tsukada, Junichi ; Ishikawa, Yuki ; Suzuki, Eiichi

  • Author_Institution
    Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
  • fYear
    2006
  • fDate
    11-13 Dec. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We have successfully developed the advanced FinFET fabrication processes for materializing FinFET CMOS circuits. Using the developed technologies, we demonstrate the advanced TiN metal gate, fin-height controlled FinFET CMOS inverter with an excellent transfer performance, and the flexible threshold voltage, asymmetric gate insulator thickness four-terminal (4T) FinFET with a greatly improved subthreshold (S) slope, for the first time
  • Keywords
    CMOS integrated circuits; invertors; titanium compounds; CMOS technology; FinFET; TiN; TiN metal gate; fin-height control; gate insulator; inverter; CMOS process; CMOS technology; Circuits; Fabrication; FinFETs; Insulation; Metal-insulator structures; Thickness control; Tin; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2006. IEDM '06. International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-4244-0439-8
  • Electronic_ISBN
    1-4244-0439-8
  • Type

    conf

  • DOI
    10.1109/IEDM.2006.346953
  • Filename
    4154388
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2390580