GaAs IC Symposium. 25th Annual Technical Digest 2003 (IEEE Cat. No.03CH37445)

fYear

2003

fDate

9-12 Nov. 2003

Abstract

The following topics are dealt with: high-speed digital technology; MMICs for handset applications; reliability; high-speed, high frequency markets and MMICs; simulation and modeling; amplifiers for S to W band applications; optical transmitter components; digital building blocks beyond 40 Gbit/s; SiGe technology; high-speed signal processing; HBT technology; optical receiver components; frequency conversion ICs; emerging technology.

Keywords

Ge-Si alloys; III-V semiconductors; MIMIC; MMIC amplifiers; circuit simulation; digital integrated circuits; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; integrated circuit modelling; integrated circuit reliability; integrated circuit technology; mobile handsets; mobile radio; optical receivers; optical transmitters; semiconductor materials; 40 Gbit/s; GaAs; GaAs integrated circuits; HBT technology; MMIC; S-band applications; SiGe; SiGe technology; W-band applications; amplifiers; digital building blocks; frequency conversion IC; handset applications; high-speed digital technology; high-speed high frequency markets; high-speed signal processing; modeling; optical receiver components; optical transmitter components; reliability; simulation; Digital integrated circuits; Gallium compounds; Germanium alloys; Heterojunction bipolar transistors; Integrated circuit fabrication; Integrated circuit modeling; Integrated circuit reliability; MIMICs; MMIC amplifiers; Optical receivers; Optical transmitters; Semiconductor materials; Silicon alloys;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE

Conference_Location

San Diego, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-7833-4

Type

conf

DOI

10.1109/GAAS.2003.1252349

Filename

1252349