High speed CMOS circuits up to 40 Gb/s and 50 GHz

Author

Wohlmuth, H.-D. ; Kehrer, D. ; Tiebout, M. ; Knapp, H. ; Wurzer, M. ; Simburger, W.

Author_Institution

Corporate Res., Infineon Technol. AG, Munich, Germany

fYear

2003

fDate

9-12 Nov. 2003

Firstpage

31

Lastpage

34

Abstract

CMOS has demonstrated to be a suitable technology for wireless communications and very high bit-rate broadband circuits over 10 Gb/s. This paper presents advances in circuit design which fully exploit the high-speed potential of a 0.13 /spl mu/m standard CMOS technology up to 40 Gb/s and 50 GHz. The combination of advanced circuit techniques and state of the art fabrication process technology results in continuing the upward shift of frequency limits.

Keywords

CMOS integrated circuits; MMIC oscillators; demultiplexing equipment; field effect MIMIC; field effect MMIC; frequency dividers; high-speed integrated circuits; millimetre wave oscillators; multiplexing equipment; voltage-controlled oscillators; 40 Gbit/s; 50 GHz; VCO; advanced circuit techniques; circuit design; demultiplexers; fabrication process technology; frequency divider; high bit rate broadband circuit; high speed CMOS circuits; low power consumption; multiplexer; CMOS technology; Costs; Energy consumption; Fabrication; Frequency conversion; Integrated circuit technology; Master-slave; Multiplexing; Optical frequency conversion; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE

Conference_Location

San Diego, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-7833-4

Type

conf

DOI

10.1109/GAAS.2003.1252356

Filename

1252356