DocumentCode
2390831
Title
CMOS and Interconnect Reliability - Interconnect, ESD, and Failure Analysis
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
1
Keywords
Active circuits; Conductivity; Design optimization; Electromigration; Electrostatic discharge; Failure analysis; FinFETs; Integrated circuit interconnections; Kinetic theory; Semiconductor device reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0438-X
Type
conf
DOI
10.1109/IEDM.2006.346964
Filename
4154399
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