A 2.3 V PHEMT power SP3T antenna switch IC for GSM handsets

Author

Gu, Z. ; Johnson, D. ; Belletete, S. ; Frykund, D.

fYear

2003

fDate

9-12 Nov. 2003

Firstpage

48

Lastpage

51

Abstract

A high power GaAs pHEMT SP3T antenna-switch IC for GSM handsets has been developed With P1dB over 36 dBm, this switch IC features high harmonic rejection of 70 dBc at 900 MHz and 34 dBm, and at 1800 MHz and 32 dBm input power, both operating at 2.3 V and at +85C Insertion loss of 0.55 dB and 0.750, and isolation of greater than 25 dB at 900 MHz and 1800 MHz, respectively, are also achieved. The high performance attributes to the combination of pHEMT process and design techniques.

Keywords

HEMT integrated circuits; III-V semiconductors; cellular radio; field effect MMIC; field effect transistor switches; gallium arsenide; microwave switches; mobile handsets; power semiconductor switches; switching circuits; 1800 MHz; 2.3 V; 900 MHz; GSM handsets; GaAs; MMIC switches; PHEMT SP3T antenna-switch IC; high harmonic rejection; high performance; high power switch IC; switching circuits; FETs; GSM; Insertion loss; PHEMTs; Power system harmonics; Switches; Switching circuits; Telephone sets; Temperature control; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE

Conference_Location

San Diego, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-7833-4

Type

conf

DOI

10.1109/GAAS.2003.1252360

Filename

1252360