Title :
Laser-Based Defect Localization on Integrated Circuits
Author :
Cole, Edward I., Jr.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM
Abstract :
The explosion in complexity of modern ICs resulting from reduced feature sizes, circuit density, and sophisticated electrical stimulus has made failure analysis and defect localization extremely difficult. Dense metallization and flip-chip packaging can leave only the backside of the IC available for interrogation. Laser-based methods provide some of the powerful tools analysts depend on to overcome these obstacles
Keywords :
failure analysis; flip-chip devices; integrated circuit metallisation; integrated circuit testing; laser materials processing; circuit density; dense metallization; electrical stimulus; failure analysis; feature sizes; flip-chip packaging; integrated circuits; laser-based defect localization; Conductors; Heating; Laser modes; Laser theory; Photoconductivity; Power demand; Silicon; Thermal resistance; Thermoelectricity; Voltage;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346968
