Reliability of commercial InGaP/GaAs HBTs under high voltage operation

Author

Kevin Feng ; Yuefei Yang ; Chanh Nguyen

Author_Institution

Global Commun. Semicond. Inc., Torrance, CA, USA

fYear

2003

fDate

9-12 Nov. 2003

Firstpage

71

Lastpage

73

Abstract

GSC has developed a high-performance, high-reliability, and manufacturable high breakdown voltage (HBV) InGaP/GaAs HBT process for power amplifiers of up to 10 V operation. Two major failure modes: sudden beta degradation and gradual beta drift, at normal operating conditions under high voltage bias were found. The associated activation energy is extracted about 1.1 eV and the projected MTTF to be 7/spl times/10/sup 6/ hours at 125/spl deg/C, which is sufficient to meet the stringent reliability requirement for infrastructure applications.

Keywords

III-V semiconductors; gallium compounds; indium compounds; power amplifiers; power bipolar transistors; semiconductor device breakdown; semiconductor device reliability; 1.1 eV; 10 V; 125 degC; HBT failure modes; HBT high voltage operation; InGaP-GaAs; activation energy; beta degradation; beta drift; commercial HBT reliability; high breakdown voltage HBT; high voltage bias; power amplifiers; projected MTTF; reliability requirements; Current density; Degradation; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Life testing; Metallization; Stress; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE

Conference_Location

San Diego, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-7833-4

Type

conf

DOI

10.1109/GAAS.2003.1252364

Filename

1252364