DocumentCode :
2390992
Title :
Field Effect Diode (FED): A novel device for ESD protection in deep sub-micron SOI technologies
Author :
Salman, Akram A. ; Beebe, Stephen G. ; Emam, Mostafa ; Pelella, Mario M. ; Ioannou, Dimitris E.
Author_Institution :
Adv. Micro Devices, Sunnyvale, CA
fYear :
2006
fDate :
11-13 Dec. 2006
Firstpage :
1
Lastpage :
4
Abstract :
In this paper the authors present the field effect diode (FED) as a novel device with a new approach for ESD protection in SOI. Device parameters are identified and optimized to achieve optimum ON and OFF behavior. Furthermore, the authors present two ways the FED can be used in an ESD protection scheme: in I/O clamping and in a high-voltage supply clamp
Keywords :
diodes; electrostatic discharge; field effect devices; silicon-on-insulator; ESD protection; electrostatic discharge; field effect diode; high-voltage supply clamp; silicon-on-insulator; Anodes; Capacitance; Clamps; Doping; Drives; Electrostatic discharge; Protection; Semiconductor diodes; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
Type :
conf
DOI :
10.1109/IEDM.2006.346971
Filename :
4154406
Link To Document :
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