Title :
1/2.5" 8 mega-pixel CMOS Image Sensor with enhanced image quality for DSC application
Author :
Kim, Jinho ; Shin, Jongchol ; Moon, Chang-Rok ; Lee, Seok-Ha ; Park, Doo-Cheol ; Jeong, Heegeun ; Kwon, Doowon ; Jung, Jongwan ; Noh, Hyunpil ; Lee, Kangbok ; Koh, Kwangok ; Lee, Duckhyung ; Kim, Kinam
Author_Institution :
Technol. Dev. Team, Samsung Electron. Co. Ltd., Yongin
Abstract :
Technology and characteristics of 8-mega density CMOS image sensor (CIS) with unit pixel size of 1.75times1.75mum2 are introduced. With recessed transfer gate (RTG) structure and other sophisticated process/device technology, remarkably enhanced saturation capacity and ultra-low dark current have been obtained, which satisfy the requirements of high density digital still camera (DSC) application
Keywords :
CMOS image sensors; cameras; 8 Mpixel; CMOS image sensor; dark current; digital still camera; enhanced saturation capacity; image quality; recessed transfer gate; CMOS image sensors; CMOS process; CMOS technology; Computational Intelligence Society; Dark current; Digital cameras; Electrons; Image quality; Oxidation; Photodiodes;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346975
