• DocumentCode
    2391133
  • Title

    CMOS Imager with Copper Wiring and Lightpipe

  • Author

    Gambino, J. ; Leidy, B. ; Adkisson, J. ; Jaffe, M. ; Rassel, R.J. ; Wynne, J. ; Ellis-Monaghan, J. ; Hoague, T. ; Meatyard, D. ; Mongeon, S. ; Kryzak, T.

  • Author_Institution
    IBM Microelectron., Essex Junction, VT
  • fYear
    2006
  • fDate
    11-13 Dec. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A CMOS imager technology is described, which uses Cu wiring and a polymer lightpipe. The microlens height must be optimized when using the lightpipe, so that light is focused into the top of the lightpipe rather than onto the photodiode. A SiN layer is used on the sidewalls to reflect light that enters the top of the lightpipe down onto the photodiode. The SiN layer also forms a hermetic seal, which protects the Cu wiring from ambient moisture. Using this structure, high quantum efficiency can be achieved for a 2.2 mum pixel and high reliability is demonstrated
  • Keywords
    CMOS image sensors; copper; hermetic seals; microlenses; photodiodes; silicon compounds; 2.2 micron; CMOS image sensors; Cu; SiN; copper wiring; microlenses; polymer lightpipe; CMOS technology; Copper; Focusing; Hermetic seals; Lenses; Microoptics; Photodiodes; Polymers; Silicon compounds; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2006. IEDM '06. International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-4244-0438-X
  • Electronic_ISBN
    1-4244-0439-8
  • Type

    conf

  • DOI
    10.1109/IEDM.2006.346977
  • Filename
    4154412