DocumentCode
2391158
Title
A highly reliable Amorphous Silicon photosensor for above IC CMOS image sensor
Author
Moussy, N. ; Gidon, P. ; Carriére, N. ; Rabaud, W. ; Giffard, B. ; Glück, B. ; Thomas, D. ; Prima, J. ; Roy, F. ; Casanova, N. ; Regolini, J. ; Chevrier, J.B. ; Collet, F. ; Ozanne-Gomila, A.S. ; Salasca, O.
Author_Institution
CEA/LETI, Grenoble
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
3
Abstract
The authors report record performances for the reliability of amorphous silicon (a-Si:H) photosensor under high flux illumination. A fully functional VGA (3.0 mum pitch) image sensor, which can withstand 90 suns (= 9 Mlux) during 26 ks, was realized by the optimization of a-Si:H parameters, the pixel structure and the reading voltage
Keywords
CMOS image sensors; amorphous semiconductors; elemental semiconductors; lighting; silicon; CMOS image sensor; Si; amorphous silicon photosensor; flux illumination; Amorphous silicon; CMOS image sensors; CMOS integrated circuits; Degradation; Filters; Image sensors; Indium tin oxide; Lighting; Photodiodes; Pixel;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0438-X
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346978
Filename
4154413
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