Noble High Density Probe Memory using Ferroelectric Media beyond Sub-10 nm Generation

Author

Yoo, D.C. ; Lee, C.M. ; Bae, B.J. ; Kim, I.S. ; Heo, J.E. ; Im, D.H. ; Choi, S.H. ; Park, S.O. ; Kim, H.S. ; Chung, U-in ; Moon, J.T. ; Ryu, B.-I. ; Kim, D.J. ; Noh, T.W.

Author_Institution

Semicond. R&D Div., Samsung Electron. Co. Ltd., Gyeonggi-Do

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

Feasibility of high density probe-based memory with polycrystalline ferroelectric media has been demonstrated for next memory applications beyond sub-10 nm generation. Noble chemical-mechanical-polishing (CMP) method was employed to fabricate a very even surface on polycrystalline MOCVD Pb(Zr,Ti)O₃ (PZT) media. On the CMP processed PZT media, domain dot array was able to be written and read even at grain boundary region by PFM technique. Moreover, 15 nm-sized domain dot was successfully demonstrated on 50 nm-thick PZT media. Also for the first time, we successfully demonstrated that the polycrystalline ultra thin 7 nm-thick PZT media has good ferroelectric properties

Keywords

chemical mechanical polishing; ferroelectric storage; ferroelectricity; lead compounds; memory architecture; nanoelectronics; titanium compounds; zirconium compounds; 15 nm; 50 nm; 7 nm; chemical-mechanical-polishing method; ferroelectric media; ferroelectric properties; high density probe memory; polycrystalline MOCVD; subnanometer generation; very even surface; Crystalline materials; Ferroelectric films; Ferroelectric materials; Grain boundaries; MOCVD; Magnetic materials; Probes; Rough surfaces; Surface morphology; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0439-8

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346985

Filename

4154420