Title :
Noise Modeling in Lateral Asymmetric MOSFET
Author :
Roy, Ananda S. ; Chauhan, Yogesh S. ; Enz, Christian C. ; Sallese, Jean-Michel
Author_Institution :
Ecole Polytechnique Federale de Lausanne
Abstract :
In this work the authors present, for the first time, an analytical noise modeling methodology in presence of lateral asymmetry. The authors also show that noise properties of lateral asymmetric (LA) MOSFETs are considerably different from the prediction of conventional Klaassen-Prins (KP) based methods and at low gate voltages; they can overestimate the noise by 2-3 orders of magnitude
Keywords :
MOSFET; semiconductor device models; semiconductor device noise; Klaassen-Prins methods; analytical noise modeling; lateral asymmetric MOSFET; low gate voltages; Analytical models; Councils; Degradation; Doping; Equations; Impedance; Low voltage; MOSFET circuits; Predictive models; Semiconductor process modeling;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346994
