High-speed InP/InGaAs DHBTs with a thin pseudomorphic base

Author

Ida, M. ; Kurishima, K. ; Ishii, K. ; Watanabe, N.

Author_Institution

NTT Photonics Labs., NTT Corp., Kanagawa, Japan

fYear

2003

fDate

9-12 Nov. 2003

Firstpage

211

Lastpage

214

Abstract

We describe thin collector InP-based double heterojunction bipolar transistors with a thin pseudomorphic base for achieving high f/sub T/ and f/sub max/. Over-300-GHz f/sub T/ and f/sub max/ are obtained with high uniformity across a 3-inch wafer. We demonstrate an ECL gate delay of 3.48 ps/stage in a 19-stage ring-oscillator using the technology. To our knowledge, this is the first report of sub-4-ps ECL gate delay, Moreover, a record f/sub max/ in mesa HBTs of 492 GHz is also demonstrated by a further lateral scaling of DHBTs.

Keywords

III-V semiconductors; emitter-coupled logic; gallium arsenide; heterojunction bipolar transistors; indium compounds; submillimetre wave transistors; 3 inch; 3.48 ps; 300 GHz; 492 GHz; DHBT lateral scaling; ECL gate delay; InP-InGaAs; high-speed DHBT; mesa HBT; ring-oscillator; thin collector double heterojunction bipolar transistors; thin pseudomorphic base; Delay; Doping; Double heterojunction bipolar transistors; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Laboratories; Logic; Photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE

Conference_Location

San Diego, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-7833-4

Type

conf

DOI

10.1109/GAAS.2003.1252396

Filename

1252396