60GHz-band low noise amplifier and power amplifier using InGaP/GaAs HBT technology

Author

Handa, S. ; Suematsu, E. ; Tanaka, H. ; Motouchi, Y. ; Yagura, M. ; Yamada, A. ; Sato, H.

Author_Institution

Device Technol. Res. Labs., Sharp Corp., Nara, Japan

fYear

2003

fDate

9-12 Nov. 2003

Firstpage

227

Lastpage

230

Abstract

In this paper, we present a 60 GHz-band low noise amplifier (LNA) and a 60 GHz-band power amplifier (PA) utilizing high performance InGaP/GaAs HBTs. The InGaP/GaAs HBTs feature a highly doped base layer, a self-aligned base contact and an undercut collector mesa structure in order to achieved low noise and high gain in the millimete-wave band. By adjusting the collector current of each HBT in the LNA to the optimum value a noise figure as low as 5.8 dB with a gain of more than 25 dB was obtained. The PA exhibited a linear gain of more than 15 dB with P1dB of 13 dBm in the 60 GHz-band.

Keywords

III-V semiconductors; bipolar MIMIC; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit noise; millimetre wave amplifiers; millimetre wave power amplifiers; 15 dB; 25 dB; 5.8 dB; 60 GHz; InGaP-GaAs; LNA noise figure; PA linear gain; highly doped HBT base layer; low noise amplifier; power amplifier; self-aligned base contact; undercut collector mesa structure; Area measurement; Costs; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit modeling; Low-noise amplifiers; MMICs; Millimeter wave radar; Millimeter wave technology; Noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE

Conference_Location

San Diego, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-7833-4

Type

conf

DOI

10.1109/GAAS.2003.1252400

Filename

1252400