Optical receiver module using an InP HEMT transimpedance amplifier for over 40 Gbit/s

Author

Fukuyarna, H. ; Murata, K. ; Sano, K. ; Kitabayashi, H. ; Yamane, Y. ; Enoki, T. ; Sugahara, H.

Author_Institution

NTT Photonics Labs., NTT Corp., Kanagawa, Japan

fYear

2003

fDate

9-12 Nov. 2003

Firstpage

237

Lastpage

240

Abstract

We developed an optical receiver module for over 40 Gbit/s that uses two ultra-high-speed device technologies: an InP HEMT transimpedance amplifier (TIA) and a uni-travelling-carrier photodiode (UTC-PD). We introduced a new design criterion for the interface between the PD and TIA in order to obtain sufficient bandwidth. We confirmed error-free operation of the optical receiver module for a 50 Gbit/s non-return-to-zero optical input signal.

Keywords

HEMT integrated circuits; III-V semiconductors; field effect MIMIC; indium compounds; millimetre wave amplifiers; modules; optical receivers; photodiodes; 50 Gbit/s; HEMT transimpedance amplifier; InP; NRZ optical input signal; PD/TIA interface; UTC-PD; optical receiver module; ultra-high-speed device technologies; uni-travelling-carrier photodiode; Bandwidth; Dynamic range; HEMTs; Indium phosphide; Monolithic integrated circuits; Optical amplifiers; Optical receivers; Photodiodes; Semiconductor optical amplifiers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE

Conference_Location

San Diego, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-7833-4

Type

conf

DOI

10.1109/GAAS.2003.1252402

Filename

1252402