Impact of Very Low Hf Concentration (Hf=6%) Cap Layer on Performance and Reliability Improvement of HfSiON -CMOSFET with EOT Scalable to 1nm

Author

Sato, Motoyuki ; Nakasaki, Yasushi ; Watanabe, Koji ; Aoyama, Tomonori ; Hasegawa, Eiji ; Koyama, Masato ; Sekine, Katsuyuki ; Eguchi, Kazuhiro ; Saito, Masaki ; Tsunashima, Yoshitaka

Author_Institution

Semicond. Co., Toshiba Corp., Isogo-ku Yokohama

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

The authors have demonstrated the stacked MOCVD HfSiON gate dielectrics with extremely low Hf concentration (Hf/(Hf+Si)=6%) cap (LHC) which realized improved mobility and superior long-term reliability of CMOSFETs while maintaining low gate leakage currents and EOT scalability to 1nm. These superior electrical characteristics of the film are mainly owing to the suppression of the Vo²⁺ formation in the LHC layer, which is evidenced by first principle calculation

Keywords

MOCVD; MOSFET; dielectric materials; hafnium compounds; leakage currents; reliability; silicon compounds; CMOSFET; EOT scalability; HfSiON; cap layer; leakage currents; reliability improvement; stacked MOCVD gate dielectrics; very low Hf concentration; Atomic measurements; CMOSFETs; Dielectric measurements; Electric variables; Electron traps; Hafnium; Large Hadron Collider; Leakage current; Nitrogen; Semiconductor films;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.347008

Filename

4154443